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1N4001S Datasheet(PDF) 1 Page - Taiwan Memory Technology

Part No. 1N4001S
Description  1A, 50V - 1000V Silicon Rectifiers
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Maker  TMT [Taiwan Memory Technology]
Homepage  http://www.tmtech.com.tw
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1N4001S Datasheet(HTML) 1 Page - Taiwan Memory Technology

   
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CREAT BY ART
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
A
CJ
pF
RθJA
°C/W
TJ
°C
TSTG
°C
Document Number: DS_D1402005
Version: F15
A-405
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
1.0
μA
15
Storage temperature range
- 55 to +150
Note 1: Pulse test with PW=300 μs, 1% duty cycle
IR
5
50
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
V
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Typical junction capacitance (Note 2)
Typical thermal resistance
50
Operating junction temperature range
- 55 to +150
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
1N
4004S
1N
4005S
1N
4006S
1N
4007S
UNIT
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case:
A-405
Weight:
0.2g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
1N
4001S
1N
4002S
1N
4003S
1N4001S - 1N4007S
Taiwan Semiconductor
1A, 50V - 1000V Silicon Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC


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