2SC3838 datasheet(2/2 Pages) ISC

Part #	2SC3838

Description	High Current-Gain Bandwidth Product

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc website：www.iscsemi.cn

2

isc Silicon NPN RF Transistor

2SC3838

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

20

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA ; RBE= ∞

11

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

3

V

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

0.5

μ

A

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

0.5

μ

A

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10mA ; IB= 5mA

0.5

V

hFE

DC Current Gain

IC= 5mA ; VCE= 10V

56

180

fT

Current-Gain—Bandwidth Product

IC= 10mA; VCE= 10V,f= 500MHz

1.4

3.2

GHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

0.8

1.5

pF

rbb’ • CC

Base Time Constant

IC= 10mA; VCB= 10V;f= 31.8MHz

4

12

ps

NF

Noise Figure

IC= 2mA ; VCE= 6V;f= 500MHz;

Rg= 50Ω

3.5

dB

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