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ADM1278 Datasheet(PDF) 30 Page - Analog Devices

Part # ADM1278
Description  Hot Swap Controller and Digital Power and Energy Monitor with PMBus Interface
Download  61 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADM1278 Datasheet(HTML) 30 Page - Analog Devices

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ADM1278
Data Sheet
ADM1278
FET
HEALTH
MONTIOR
OVER
CURRENT
FAULT
OVER
TEMPERATURE
FAULT
GATE
TEMP
FAULT
RSENSE
HS+
HS–
ENABLE
Figure 58. FAULT Pin Operation
ENABLE/ENABLE INPUT
The ADM1278 provides a dedicated ENABLE/ENABLE digital
input pin. The ADM1278-1 and ADM1278-2 have an active
high ENABLE pin whereas the ADM1278-3 has an active low
ENABLE pin. The ENABLE/ENABLE pin allows the ADM1278
to remain off by using a hardware signal, even when the voltage
on the UV pin is greater than 1.0 V and the voltage on the OV
pin is less than 1.0 V. Although the UV pin can be used to
provide a digital enable signal, using the ENABLE/ENABLE pin
for this purpose means that the ability to monitor for
undervoltage conditions is not lost.
In addition to the conditions for the UV and OV pins, the
ADM1278 ENABLE/ENABLE input pin must be asserted for
the device to begin a power-up sequence.
CURRENT SENSE OUTPUT (CSOUT)
The ADM1278 provides a CSOUT pin voltage output that is
proportional to the VSENSE_HS voltage.
CSOUT = VSENSE_HS × 350
The CSOUT voltage is an analog representation of the main
system current flowing through RSENSE. A resistor divider can be
added to CSOUT to clamp the voltage output to any
downstream devices, provided the maximum load conditions
described in Table 2 are not exceeded.
The response time of the CSOUT pin to a change in VSENSE
voltage is very fast; therefore, it can be used when fast response
time is required, for example, power throttling. The CSOUT
response time to a 10 mV step in VSENSE voltage is typically 10 µs.
REMOTE TEMPERATURE SENSING
The ADM1278 provides the capability to measure temperature
at a remote location with a single discrete NPN or PNP
transistor. The temperature measurements can be read back
over the PMBus interface. Warning and fault thresholds can
also be set on the temperature measurement. Exceeding a fault
threshold causes the controller to turn off the pass MOSFET,
deassert the PWRGD pin, and assert the FAULT pin.
The external transistor is typically placed close to the main pass
MOSFETs to provide an additional level of protection. The
controller can then monitor and respond to an elevated
MOSFET operating temperature. It is not possible to measure
temperature at more than one location on the board.
Place the transistor close to the MOSFET for best accuracy. If
the transistor is placed on the opposite side of the PCB, use
multiple vias to ensure the optimum transfer of heat from the
MOSFET to the transistor.
Temperature Measurement Method
A simple method of measuring temperature is to exploit the
negative temperature coefficient of a diode by measuring the
base-emitter voltage (VBE) of a transistor operated at constant
current. However, this technique requires calibration to null the
effect of the absolute value of VBE, which varies from device to
device.
The technique used in the ADM1278 is to measure the change
in VBE when the device is operated at three different currents.
The use of a third current allows automatic cancellation of
resistances in series with the external temperature sensor.
The temperature sensor takes control of the ADC for 64 µs
(typical) every 6 ms. It takes 12 ms to obtain a new temperature
measurement from the ADC.
Remote Sensing Diode
The ADM1278 is designed to work with discrete transistors.
The transistor can be either a PNP or NPN connected as a
diode (base shorted to the collector). If an NPN transistor is
used, the collector and base are connected to the TEMP pin and
the emitter to PGND. If a PNP transistor is used, the collector
and base are connected to PGND and the emitter to TEMP.
The best accuracy is obtained by choosing devices according to
the following criteria:
Base-emitter voltage greater than 0.25 V at 6 µA, at the
highest operating temperature.
Base-emitter voltage less than 0.95 V at 100 µA, at the
lowest operating temperature.
Base resistance less than 100 Ω.
Small variation in hFE (50 to 150) that indicates tight
control of VBE characteristics.
Transistors, such as the 2N3904, 2N3906, or equivalent in
SOT-23 packages are suitable devices to use.
Noise Filtering
For temperature sensors operating in noisy environments, the
industry standard practice has been to place a capacitor across
the temperature pins to mitigate the effects of noise. However,
large capacitances affect the accuracy of the temperature
measurement, leading to a recommended maximum capacitor
value of 1000 pF. Although this capacitor reduces the noise, it
does not eliminate it, making it difficult to use the sensor in a
very noisy environment.
The ADM1278 has a major advantage over other devices for
eliminating the effects of noise on the external sensor. The
Rev. A | Page 30 of 61


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