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2N2955HV Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N2955HV Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon PNP Power Transistors 2N2955HV ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; RBE= 100Ω -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.7 mA ICEX Collector Cutoff Current VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V,TC= 150℃ -1.0 -5.0 mA IEBO Emitter Cutoff Current VEB= -7.0V; IC=0 -5.0 mA hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 70 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5.0 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= -40V,t= 1.0s,Nonrepetitive -2.87 A fT Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V;ftest= 1.0MHz 2.5 MHz |
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