1 of 9

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

RF MEMS

LDMOS

1

2

3

4

5

6

7

8

12

11

10

9

16

15

14

13

NC

NC

NC

GND

RF IN

RF OUT/VCC2

RF OUT/VCC2

G8

RFPA0133

3 TO 5V PROGRAMMABLE GAIN HIGH

EFFICIENCY POWER AMPLIFIER

The RFPA0133 is a 3V to 5V high efficiency programmable gain amplifier

IC. The device is manufactured on an advanced Gallium Arsenide Hetero-

junction Bipolar Transistor (HBT) process. The device has been designed

to offer saturated efficiency greater than 60% over a range of frequencies

from 380MHz to 960MHz.

Features



0.5W CW Output Power at

3.6V



1W CW Output Power at 5V



32dB Small Signal Gain at

900MHz





Digitally Controlled Output

Power



380MHz to 960MHz

Frequency Range



High Isolation

Applications



Analog Communication

Systems



900MHz Spread Spectrum

Systems



400MHz Industrial Radios



Driver Stage for Higher Power

Applications



3V to 5V Applications



High Isolation Buffer

DS120206



Package Style: QFN, 16-Pin, 3mmx3mm

RFPA0133SQ

Sample Bag with 25 Pieces

RFPA0133SR

7” Reel with 100 Pieces

RFPA0133TR7

7” Reel with 2500 Pieces

RFPA0133PCK-410 860MHz to 930MHz PCBA with 5-piece Sample Bag

RFPA0133PCK-411 430MHz to 470MHz PCBA with 5-piece Sample Bag