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FZT968_16 Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. FZT968_16
Description  12V PNP HIGH CURRENT LOW SATURATION POWER TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT968
Datasheet Number: DS33180 Rev. 4 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
FZT968
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-15
-28
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-12
-20
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-6
-8
V
IE = -100µA
Collector Cutoff Current
ICBO
<1
-10
-1
nA
µA
VCB = -12V
VCB = -12V, TA = +100°C
Emitter Cutoff Current
IEBO
<1
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 10)
hFE
300
450
IC = -10mA, VCE = -1V
300
450
1,000
IC = -500mA, VCE = -1V
200
300
IC = -5A, VCE = -1V
150
240
IC = -10A, VCE = -1V
50
IC = -20A, VCE = -1V
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-65
-130
mV
IC = -500mA, IB = -5mA
-132
-170
IC = -2A, IB = -50mA
-360
-450
IC = -6A, IB = -250mA
Base-Emitter Saturation Voltage (Note 10)
VBE(sat)
-1.05
-1.2
V
IC = -6A, IB = -250mA
Base-Emitter Turn-on Voltage (Note 10)
VBE(on)
-0.87
-1.05
V
IC = -6A, VCE = -1V
Transitional Frequency (Note 10)
fT
80
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output capacitance
Cobo
161
pF
VCB = -20V, f = 1MHz
Switching Time
tON
120
ns
VCC = -10V, IC = -4A,
IB1 = -IB2 = -400mA
tOFF
116
Note:
10. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.




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