BC850CW datasheet(1/2 Pages) DIOTEC

Part #	BC850CW

Description	Surface mount Si-Epitaxial PlanarTransistors

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Manufacturer	DIOTEC [Diotec Semiconductor]

Direct Link	http://www.diotec.com

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

2) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

12

01.11.2003

12

3

Type

Code

2±0.1

1±0.1

0.3

1.3

BC 846W ... BC 850W

General Purpose Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

200 mW

Plastic case

SOT-323

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BC 846W

BC 847W

BC 850W

BC 848W

BC 849W

Collector-Emitter-voltage

B open

V

CE0

65 V

45 V

30 V

Collector-Base-voltage

E open

V

CB0

80 V

50 V

30 V

Emitter-Base-voltage

C open

V

EB0

6 V

5 V

Power dissipation – Verlustleistung

P

tot

200 mW 1)

Collector current – Kollektorstrom (DC)

I

C

100 mA

Peak Collector current – Kollektor-Spitzenstrom

I

CM

200 mA

Peak Base current – Basis-Spitzenstrom

I

BM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

- I

EM

200 mA

Junction temperature – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Group A

Group B

Group C

DC current gain – Kollektor-Basis-Stromverhältnis 2)

V

CE = 5 V, IC = 10

:Ah

FE

typ. 90

typ. 150

typ. 270

V

CE = 5 V, IC = 2 mA

h

FE

110...220

200...450

420...800

h-Parameters at V

CE = 5V, IC = 2 mA, f = 1 kHz

Small signal current gain – Stromverstärkung h

fe

typ. 220

typ. 330

typ. 600

Input impedance – Eingangs-Impedanz

h

ie

1.6...4.5 k

S

3.2...8.5 k

S

6...15 k

S

Output admittance – Ausgangs-Leitwert

h

oe

18 < 30

:S

30 < 60

:S

60 < 110

:S

Reverse voltage transfer ratio

Spannungsrückwirkung

h

re

typ.1.5 *10-4

typ. 2 *10-4

typ. 3 *10-4

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