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BCV27 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BCV27 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 8 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCV27, BCV47 Darlington Transistors NPN Surface mount Si-Epitaxial PlanarTransistors NPN Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Version 2004-01-20 Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B1 2 = E2 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25/C) Grenzwerte (T A = 25/C) BCV27 BCV47 Collector-Emitter-voltage V BE = 0 V CES 30 V 60 V Collector-Base-voltage E open V CB0 40 V 80 V Emitter-Base-voltage C open V EB0 10 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 500 mA Peak Collector current – Kollektor-Spitzenstrom I CM 800 mA Base current – Basisstrom (dc) I B 100 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25/C) Kennwerte (T j = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, VCB = 30 V I E = 0, VCB = 60 V BCV27 BCV47 I CB0 I CB0 – – – – 100 nA 100 nA Emitter-Base cutoff current – Emitterreststrom I C = 0, VEB = 10 V I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) I C = 100 mA, IB = 0.1 mA V CEsat – – 1 V |
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Similar Description - BCV27 |
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