PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

10

A

Pulsed Drain Current (Note 2)

40

A

Avalanche Current (Note 2)

10

A

Avalanche Energy

Single Pulsed (Note 3)

920

mJ

Repetitive (Note 2)

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

W

TO-2

20

156

TO-220F1

63

W/°

Junction Temperature

150

°

Storage Temperature

-55 ~ +150

°

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

10 A, di/dt

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

JA

° /W

TO-220F

TO-2

20

62.5

Junction to Case

JC

° /W

TO-2

20

0.8

TO-220F

1.98

NJ10N80 POWER MOSFET

TO-2

20F

63

TO-2

20

1.25

TO-2

20F

0.504