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2SB924 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB924 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB924 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A; IB= -1.2A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 280 hFE-2 DC Current Gain IC= -12A; VCE= -2V 30 fT Current-Gain —Bandwidth Product IC= -1A; VCE= -2V 20 MHz h FE-1 Classifications Q R S 70-140 100-200 140-280 |
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