SUP60N10-16L_16 datasheet(1/6 Pages) VISHAY

Part #	SUP60N10-16L

Description	N-Channel 100-V (D-S) 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized

APPLICATIONS

D DC/DC Primary Side Switch

SUP60N10-16L

Vishay Siliconix

Document Number: 71928

S-03600—Rev. B, 31-Mar-03

www.vishay.com

1

N-Channel 100-V (D-S) 175

_C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (W)

ID (A)

100

0.016 @ VGS = 10 V

60

100

0.018 @ VGS = 4.5 V

56

D

G

S

N-Channel MOSFET

TO-220AB

Top View

GD S

DRAIN connected to TAB

SUP60N10-16L

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 175_C)

TC = 25_C

ID

60

Continuous Drain Current (TJ = 175_C)

TC = 125_C

ID

35

A

Pulsed Drain Current

IDM

100

A

Avalanche Current

IAR

40

Repetitive Avalanche Energya

L = 0.1 mH

EAR

80

mJ

Maximum Power Dissipationa

TC = 25_C

PD

150b

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (Free Air)

RthJA

62.5

_C/W

Junction-to-Case

RthJC

1.0

_C/W

Notes

a.

Duty cycle

v 1%.

b.

See SOA curve for voltage derating.

c.

When mounted on 1” square PCB (FR-4 material).

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SUP60N10-16L Datasheet(PDF) 1 Page - Vishay Siliconix

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