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SUM110N10 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUM110N10 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 Vishay Siliconix SUM110N10-09 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 30 A 0.0078 0.0095 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 0.017 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.025 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 6700 pF Output Capacitance Coss 750 Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 85 A 110 160 nC Gate-Source Chargec Qgs 24 Gate-Drain Chargec Qgd 24 Gate Resistance Rg 1.0 6.2 Ω Turn-On Delay Timec td(on) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 20 30 ns Rise Timec tr 125 200 Turn-Off Delay Timec td(off) 55 85 Fall Timec tf 130 195 Source-Drain Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 110 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 50 A, dI/dt = 100 A/µs 70 140 ns Peak Reverse Recovery Charge IRM(REC) 5.5 10 A Reverse Recovery Charge Qrr 0.19 0.35 µC |
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