SUM110N10 datasheet(2/8 Pages) VISHAY

Part #	SUM110N10

Description	N-Channel 100 V (D-S) 175 °C MOSFET

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Document Number: 70677

S10-0644-Rev. G, 22-Mar-10

Vishay Siliconix

SUM110N10-09

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VDS = 0 V, ID = 250 µA

100

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2

4

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

µA

VDS = 100 V, VGS = 0 V, TJ = 125 °C

50

VDS = 100 V, VGS = 0 V, TJ = 175 °C

250

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

120

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 30 A

0.0078

0.0095

Ω

VGS = 10 V, ID = 30 A, TJ = 125 °C

0.017

VGS = 10 V, ID = 30 A, TJ = 175 °C

0.025

Forward Transconductancea

gfs

VDS = 15 V, ID = 30 A

25

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

6700

pF

Output Capacitance

Coss

750

Reverse Transfer Capacitance

Crss

280

Total Gate Chargec

Qg

VDS = 50 V, VGS = 10 V, ID = 85 A

110

160

nC

Gate-Source Chargec

Qgs

24

Gate-Drain Chargec

Qgd

24

Gate Resistance

Rg

1.0

6.2

Ω

Turn-On Delay Timec

td(on)

VDD = 50 V, RL = 0.6 Ω

ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω

20

30

ns

Rise Timec

tr

125

200

Turn-Off Delay Timec

td(off)

55

85

Fall Timec

tf

130

195

Source-Drain Diode Ratings and Characteristics TC = 25 °C

b

Continuous Current

IS

110

A

Pulsed Current

ISM

240

Forward Voltagea

VSD

IF = 85 A, VGS = 0 V

1.0

1.5

V

Reverse Recovery Time

trr

IF = 50 A, dI/dt = 100 A/µs

70

140

ns

Peak Reverse Recovery Charge

IRM(REC)

5.5

10

A

Reverse Recovery Charge

Qrr

0.19

0.35

µC

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