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BC817-25 Datasheet(PDF) 1 Page - Olitech Electronics Co.Ltd |
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BC817-25 Datasheet(HTML) 1 Page - Olitech Electronics Co.Ltd |
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1 / 2 page  Page:P2-P1 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Marking BC817-16 BC817-25 BC817-40 6A 6B 6C MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 50 V DCollector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Collector Current -Continuous I C 500 mA Collector Power Dissipation PC 300 mW Junction Temperature T J 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCB O IC= 10μA, IE=0 50 V Collector-emitter breakdown voltage VCE O IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEB O IE= 1μA, IC=0 5 V Collector cut-off current ICB O VCB= 45 V , IE=0 0.1 μA Emitter cut-off current IEB O VEB= 4V, IC=0 0.1 μA DC current gain hFE(1 ) VCE= 1V, IC= 100mA 100 600 hFE(2 ) VCE= 1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage VB E VCE= 1 V, IC= 500mA 1.2 V Collecter capactiance Cob VCB=10V ,f=1MHz 10 pF Transition frequency fT VCE= 5 V, IC= 10mA f=100MHz 100 MHz CLASSIFICATION OF hFE Rank 6A 6B 6C Range 100-250 160-400 250-600 (NPN) (NPN) (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO BC817-16 BC817-25 BC817-40 Plastic-Encapsulate Transistors Email: info@olitech-elec.com Website: www.olitech-elec.com OLITECH ELECTRONICS CO. LTD. |
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