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2N2222 Datasheet(PDF) 1 Page - Nanjing International Group Co |
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2N2222 Datasheet(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage 2N2222 2N2222A VCBO 60 75 V Collector Emitter Voltage 2N2222 2N2222A VCEO 30 40 V Emitter Base Voltage 2N2222 2N2222A VEBO 5 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 55 to + 150 O C 1. Emitter 2. Base 3. Collector TO-92 Plastic Package |
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