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FFPF08S60ST Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FFPF08S60ST Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FFPF08S60ST Rev. C2 Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Pulse : Test Pulse width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Parameter Conditions Min. Typ. Max Unit VF1 IF = 8 A IF = 8 A TC = 25 C TC = 125 C - - 2.1 1.6 2.6 - V V IR1 VR = 600 V VR = 600 V TC = 25 C TC = 125 C - - - - 100 500 A A trr IF =1 A, diF/dt = 100 A/s, VR= 30 V TC = 25 C- - 25 ns trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/s, VR = 390 V TC = 25 C- - - - 19 2.2 0.6 21 30 - - - ns A nC trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/s, VR= 390 V TC = 125 C- - - - 58 4.3 1.3 125 - - - - ns A nC WAVL Avalanche Energy (L = 40 mH) 20 - - mJ Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform |
Similar Part No. - FFPF08S60ST_14 |
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Similar Description - FFPF08S60ST_14 |
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