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IS66WVD2M16ALL Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS66WVD2M16ALL Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 52 page IS66WVD2M16ALL 10 Rev.A | May 2011 www.issi.com - SRAM@issi.com Burst Write Operation After CE# goes LOW, the address to access is latched on the rising edge of the next clock that ADV# is LOW. During this first clock rising edge, WE# indicates whether the operation is going to be a WRITE (WE# =LOW, Figure 3). Data is placed to the multiplexed data bus (ADQ0~ADQ15) with consecutive clock cycles when WAIT de-asserts. The WAIT output asserts when a burst is initiated, and de-asserts to indicate when data is to be transferred into (or out of ) the memory. WAIT will again be asserted at the boundary of a row, unless wrapping within the burst length. A full 4 word synchronous write access is shown in Figure 3 and the AC characteristics are specified in Table 18. Figure 3. Synchronous Write Access Timing Write Burst Identified (WE#=LOW) Address ADQ0- ADQ15 ADV# CE# UB#/LB# WAIT WE# CLK tCLK VALID ADDRESS tKW VALID ADDRESS tSP tHD tHD tCEM tCSP tHD tSP tHD tKW DATA IN DATA IN DATA IN DATA IN tCBPH HiZ tSP tHD tSP tAS tAS tHD |
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