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IS66WVC2M16ALL Datasheet(PDF) 53 Page - Integrated Silicon Solution, Inc |
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IS66WVC2M16ALL Datasheet(HTML) 53 Page - Integrated Silicon Solution, Inc |
53 / 67 page IS66WVC2M16ALL 53 Rev.A | June 2011 www.issi.com – SRAM@issi.com VALID ADDRESS tSP tHD tKOH tACLK tCEM tHD tBOE tOLZ tKHTL VALID OUTPUT VALID OUTPUT VALID OUTPUT VALID OUTPUT tABA tHZ HiZ tCEW tOHZ Figure 38: Burst WRITE followed by Burst READ Address DQ0- DQ15 ADV# CE# UB#/LB# WAIT WE# OE# CLK Notes: 1. Non-default BCR settings for burst WRITE followed by burst READ; latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns. CE# can stay LOW between burst READ and burst WRITE operations, but CE# must not remain LOW longer than tCEM. See burst interrupt diagram (Figure 39 through 44) for cases where CE# stay LOW between bursts. tCLK VALID ADDRESS tCEW tSP tHD tHD tCEM tCSP tSP tKHTL DATA INDATA IN DATA IN DATA IN tCBPH HiZ tSP tHD tSP tAS tAS tHD |
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