1SV310

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV310

VCO for UHF Band Radio

• Useful for small size tuner

Characteristics

Symbol

Rating

Unit

Reverse voltage

10

V

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

10

⎯

⎯

V

Reverse current

⎯

⎯

3

nA

Capacitance

9.7

⎯

11.1

pF

Capacitance

4.45

⎯

5.45

pF

Capacitance ratio

⎯

1.8

2.1

⎯

⎯

Series resistance

⎯

0.28

0.4

Ω

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Start of commercial production

1998-02