IS45R86400F datasheet(32/68 Pages) ISSI

Part #	IS45R86400F

Description	8K refresh cycles every 64 ms

Download	68 Pages

Scroll/Zoom	100%

Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

Logo

32 / 68 page

32

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

11/5/2013

IS42/45R86400F/16320F/32160F, IS42/45S86400F/16320F/32160F

diagram for each possible CAS latency; data element n +

3 is either the last of a burst of four or the last desired of

alongerburst.FollowingthePRECHARGEcommand,a

subsequent command to the same bank cannot be issued

until trp is met. Note that part of the row precharge time is

hidden during the access of the last data element(s).

In the case of a fixed-length burst being executed to

completion, a PRECHARGE command issued at the

optimum time (as described above) provides the same

operation that would result from the same fixed-length

burstwithautoprecharge.ThedisadvantageofthePRE-

CHARGEcommandisthatitrequiresthatthecommand

and address buses be available at the appropriate time to

issuethecommand;theadvantageofthePRECHARGE

command is that it can be used to truncate fixed-length

or full-page bursts.

Full-pageREADburstscanbetruncatedwiththeBURST

TERMINATE command, and fixed-length READ bursts

maybetruncatedwithaBURSTTERMINATEcommand,

providedthatautoprechargewasnotactivated.TheBURST

TERMINATEcommandshouldbeissuedx cycles before

the clock edge at which the last desired data element is

valid, where x equalstheCASlatencyminusone.Thisis

shownintheREADBurstTerminationdiagramforeach

possible CAS latency;data element n + 3 is the last desired

data element of a longer burst.

Similar Part No. - IS45R86400F

Manufacturer	Part #	Datasheet	Description
Integrated Silicon Solu...	IS45R86400D	1Mb / 66P	Internal bank for hiding row access/precharge

Manufacturer	Part #	Datasheet	Description
Integrated Silicon Solu...	IS42VS16100E	1Mb / 81P	2048 refresh cycles every 32 ms
Elpida Memory	HM5112805FLTD-6	214Kb / 32P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor	HM5112805F-6	480Kb / 34P	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor	HM5165165F	510Kb / 37P	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
Elpida Memory	HM5164165F	315Kb / 36P	64M EDO DRAM (4-Mword 횞 16-bit) 8k refresh/4k refresh
Elpida Memory	HM5112805FTD-5	270Kb / 31P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
Infineon Technologies A...	S27KL0642	1Mb / 58P	64-Mb HYPERRAM??self-refresh DRAM (PSRAM) 002-24692 Rev. *H
Cypress Semiconductor	CY14E064L	840Kb / 16P	64-Kbit (8K x 8) nvSRAM
Cypress Semiconductor	CY14E064L	520Kb / 17P	64 Kbit (8K x 8) nvSRAM
Samsung semiconductor	M466F0804DT1-L	463Kb / 20P	8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh