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IS42R86400F Datasheet(PDF) 30 Page - Integrated Silicon Solution, Inc |
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IS42R86400F Datasheet(HTML) 30 Page - Integrated Silicon Solution, Inc |
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30 / 68 page  30 Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 11/5/2013 IS42/45R86400F/16320F/32160F, IS42/45S86400F/16320F/32160F CLK CKE ROW ADDRESS BANK ADDRESS CS RAS CAS WE A0-A12 BA0,BA1 HIGH ACTIVATING SPECIFIC ROW WITHIN SPE- CIFIC BANK DON'T CARE CLK COMMAND ACTIVE NOP NOP tRCD T0 T1 T2 T3 T4 READ or WRITE CHIP OPERATION BANK/ROW ACTIVATION BeforeanyREADorWRITEcommandscanbeissued to a bank within the SDRAM, a row in that bank must be “opened.”ThisisaccomplishedviatheACTIVEcommand, which selects both the bank and the row to be activated (see ActivatingSpecificRowWithinSpecificBank). After opening a row (issuinganACTIVEcommand), a READ orWRITEcommandmaybeissuedtothatrow,subjectto the trcd specification. Minimum trcd should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE commandonwhichaREADorWRITEcommandcanbe entered.Forexample,atrcd specification of 15ns with a 143 MHz clock (7ns period) results in 2.14 clocks, rounded to3.Thisisreflectedinthefollowingexample,whichcov- ersanycasewhere2<[trcd (MIN)/tck] ≤3.(Thesame procedure is used to convert other specification limits from time units to clock cycles). AsubsequentACTIVEcommandtoadifferentrowinthe same bank can only be issued after the previous active rowhasbeen“closed”(precharged).Theminimumtime intervalbetweensuccessiveACTIVEcommandstothe same bank is defined by trc. AsubsequentACTIVEcommandtoanotherbankcanbe issued while the first bank is being accessed, which results inareductionoftotalrow-accessoverhead.Theminimum timeintervalbetweensuccessiveACTIVEcommandsto different banks is defined by trrd. EXAMPLE: MEETING TRCD (MIN) WHEN 2 < [TRCD (MIN)/TCK] ≤ 3 |
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