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CRS10I30B Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # CRS10I30B
Description  TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CRS10I30B Datasheet(HTML) 3 Page - Toshiba Semiconductor

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CRS10I30B
2013-11-01
3
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a
moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IF(AV) and Tj be below 120°C. When using this device, take the margin into consideration by
using an allowable Ta max-IF(AV) curve.
IFSM:
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.


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