Power Amplifier

37.0 - 40.0 GHz

Rev. V2

XP1080-QU

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2

Electrical Specifications: 37-40.15 GHz (Ambient Temperature T = 25°C)

Parameter

Units

Min.

Typ.

Max.

Input Return Loss (S11)

dB

10.0

14.0

-

Output Return Loss (S22)

dB

4.0

8.0

-

Small Signal Gain (S21)

dB

21.0

25.0

30.0

Gain Flatness (

S21)

dB

-

+/-1.0

-

Reverse isolation (S12)

dB

-

50

-

Output Power for 1dB Compression Point (P1dB)

dBm

-

27.0

-

Output IMD3 with Pout (scl) = 14 dBm

dBc

43.0

48.0

-

Output IP3

dBm

35.5

+38.0

-

Drain Bias Voltage (Vd)

VDC

-

4.0

4.0

Gate Bias Voltage (Vg)

VDC

-1.0

-0.3

-0.1

Supply Current (Id1) (Vd=4.0V, Vg=-0.3V)

mA

-

1000

1200

Parameter

Absolute Max.

Supply Voltage (Vd)

+4.3 V

Gate Bias Voltage (Vg)

1.5 V < Vg < 0 V

Input Power (Pin)

15 dBm

Abs. Max Junction/Channel Temp

MTTF Graph 1

Max. Operating Junction/Channel

Temp

175°C

Continuous Power Dissipation (Pdiss)

at 85 °C

7.0 W

Thermal Resistance (Tchannel=150°C)

12°C/W

Operating Temperature (Ta)

-40°C to +85°C

Storage Temperature (Tstg)

-65°C to +150°C

Mounting Temperature

See solder reflow

profile

ESD Min. - Machine Model (MM)

Class A

ESD Min. - Human Body Model (HBM)

Class 1A

MSL Level

MSL3

2. Channel temperature directly affects a device's MTTF.

Channel temperature should be kept as low as possible to

maximize lifetime.

3. For saturated performance it recommended that the sum of

(2*Vdd + abs (Vgg)) <9V

Recommended Layout