Image Reject Mixer

32.0-42.0 GHz

Rev. V1

XM1003-BD

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Features

 Sub-harmonic Image Reject Mixer

 GaAs HBT Technology

 9.0 dB Conversion Loss

 18.0 dB Image Rejection

 100% On-Wafer RF Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 32.0-42.0 GHz GaAs MMIC sub-

harmonic image reject mixer can be used as an up-

or down-converter. The device has a conversion

loss of 9.0 dB with 18.0 dB image rejection across

the band. I and Q mixer outputs are provided and an

external 90 degree hybrid is required to select the

desired sideband. This MMIC uses M/A-COM Tech’s

GaAs HBT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity. The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process. This device is well suited for

Millimeter-wave

Point-to-Point

Radio,

LMDS,

SATCOM and VSAT applications.

Ordering Information

Part Number

Package

XM1003-BD-000V

“V” - vacuum release

gel paks

XM1003-BD-EV1

evaluation module

Absolute Maximum Ratings

Parameter

Absolute Max.

Input Power (RF Pin)

+20.0 dBm

Input Power (IF Pin)

+20.0 dBm

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

-55 °C to +125 °C

Chip Device Layout