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XL1000-BD-EV1 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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XL1000-BD-EV1 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 10 page Low Noise Amplifier 20.0-40.0 GHz Rev. V1 XL1000-BD 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XL1000-BD-000V “V” - vacuum release gel paks XL1000-BD-EV1 evaluation module Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +7.0 VDC Supply Current (Id) 70 mA Input Power (Pin) +12 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to +85 °C Channel Temperature (Tch)1 +175 °C 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. Chip Device Layout |
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