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TPS65010RGZT Datasheet(PDF) 7 Page - Texas Instruments

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Part # TPS65010RGZT
Description  Power and Battery Management IC for Li-Ion Powered Systems
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS65010RGZT Datasheet(HTML) 7 Page - Texas Instruments

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TPS65010
www.ti.com
SLVS149C – JUNE 2003 – REVISED SEPTEMBER 2015
Electrical Characteristics (continued)
VI(MAIN) = VI(CORE) = VCC = VI(LDO1) = VI(LDO2) = 3.6 V, TA = -40°C to 85°C, typical values are at TA = 25°C battery charger
specifications are valid in the range 0°C < TA < 85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Time between UVLO going active
td(uvlo)
(PWRFAIL going low) and supplies being
1.68
2.4
3.2
ms
disabled
Time between chip overtemperature
td(overtemp)
condition being recognized (PWRFAIL
1.68
2.4
3.2
ms
going low) and supplies being disabled
SUPPLY PIN: VCC
I(Q)
Operating quiescent current
VI = 3.6 V, current into Main + Core + VCC
58
µA
VI = 3.6 V, BATT_COVER = GND,
IO(SD)
Shutdown supply current
15
25
µA
Current into Main + Core + VCC
VMAIN STEP-DOWN CONVERTER
VI
Input voltage range
2.5
6.0
V
IO
Maximum output current
1000
mA
IO(SD)
Shutdown supply current
BATT_COVER = GND
0.1
1
µA
rDS(on)
P-channel MOSFET on-resistance
VI(MAIN) = VGS = 3.6 V
110
210
m
Ilkg(p)
P-channel leakage current
V(DS) = 6.0 V
1
µA
rDS(on)
N-channel MOSFET on-resistance
VI(MAIN) = VGS = 3.6 V
110
200
m
Ilkg(N)
N-channel leakage current
V(DS) = 6.0 V
1
µA
IL
P-channel current limit
2.5 V< VI(MAIN) < 6.0 V
1.4
1.75
2.1
A
fS
Oscillator frequency
1
1.25
1.5
MHz
VI(MAIN) = 2.7 V to 6.0 V; IO = 0 mA
0%
3%
2.5 V
VI(MAIN) = 2.7 V to 6.0 V;
3%
3%
0 mA
≤ IO ≤ 1000 mA
VI(MAIN) = 2.95 V to 6.0 V; IO = 0 mA
0%
3%
2.75 V
VI(MAIN) = 2.95 V to 6.0 V;
3%
3%
0 mA
≤ IO ≤ 1000 mA
VO(MAIN)
Fixed output voltage
VI(MAIN) = 3.2 V to 6.0 V; IO = 0 mA
0%
3%
3.0 V
VI(MAIN) = 3.2 V to 6.0 V;
3%
3%
0 mA
≤ IO ≤ 1000 mA
VI(MAIN) = 3.5 V to 6.0 V; IO= 0 mA
0%
3%
3.3 V
VI(MAIN) = 3.5 V to 6.0 V;
3%
3%
0 mA
≤ IO ≤ 1000 mA
VI(MAIN) = VO(MAIN) + 0.5 V (min. 2.5 V) to
Line regulation
0.5
%/V
6.0 V, IO = 10 mA
Load regulation
IO = 10 mA to 1000 mA
0.12
%/A
R(VMAIN)
VMAIN discharge resistance
400
VCORE STEP-DOWN CONVERTER
VI
Input voltage range
2.5
6.0
V
IO
Maximum output current
400
mA
IO(SD)
Shutdown supply current
BATT_COVER = GND
0.1
1
µA
rDS(on)
P-channel MOSFET on-resistance
VI(CORE) = VGS = 3.6 V
275
530
m
Ilkg(p)
P-channel leakage current
VDS = 6.0 V
0.1
1
µA
rDS(on)
N-channel MOSFET on-resistance
VI(CORE) = VGS = 3.6 V
275
500
m
Ilkg(N)
N-channel leakage current
VDS = 6.0 V
0.1
1
µA
IL
P-channel current limit
2.5 V< VI(CORE) < 6.0 V
600
700
900
mA
fS
Oscillator frequency
1
1.25
1.5
MHz
Copyright © 2003–2015, Texas Instruments Incorporated
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