1SS403

TOSHIBA Diode

Silicon Epitaxial Planar Type

1SS403

High Voltage Switching Applications

 AEC-Q101 Qualified (Note1)

 Two-pin small packages are suitable for higher mounting densities.

 Excellent in forward current and forward voltage

characteristics

 Fast reverse recovery time

 Small total capacitance

Note1: For detail information, please contact to our sales.

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

250

V

Reverse voltage

200

V

Maximum (peak) forward current

300

mA

Average forward current

100

mA

Surge current (10ms)

2

A

Power dissipation

P

200 *

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,

with copper pad 4 mm × 4 mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Forward voltage

―

―

0.72

1.0

V

―

―

0.90

1.2

Reverse current

―

―

―

0.1

μA

―

―

―

1.0

Total capacitance

―

―

1.5

3.0

pF

Reverse recovery time

―

―

10

60

ns

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.0045g (typ.)

Unit: mm

Start of commercial production

1998-10

2015-01-09

1