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DHE1D Datasheet(PDF) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd. |
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DHE1D Datasheet(HTML) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd. |
1 / 2 page SURFACE MOUNT HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Case: JEDEC SOD-123FL molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DHE1B SYMBOLS UNITS Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Low reverse leakage 100 70 100 400 280 400 600 420 600 VOLTS VOLTS VOLTS Amp Amps Volts VRRM VRMS VDC I(AV) IFSM VF 1.0 25.0 1.4 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C IR 5.0 100.0 A µ Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. DHE1A THRU DHE1M DHE1D DHE1G DHE1J DHE1M U1B U1D U1G U1J U1M U1K DHE1K Maximum reverse recovery time (NOTE 1) Note: Operating junction and storage temperature range R θJA TJ,TSTG 180 -50 to +150 C Typical thermal resistance °C/W 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 50 ns 50 35 50 U1A DHE1A trr 200 140 200 800 560 800 1.0 1.7 1000 700 1000 75 SOD-123FL 2.8±0.1 Cathode Band Top View 3.7±0.2 0.6±0.25 Dimensions in millimeters MDD Catalog Number at Ta=65°C |
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