MICROWAVE CORPORATION

8 - 257

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC481MP86

v00.0603

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 5.0 GHz

Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+6.0 Vdc

Collector Bias Current (Icc)

100 mA

RF Input Power (RFin)(Vcc = +5.15 Vdc)

+17 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 11.6 mW/°C above 85 °C)

0.753 W

Thermal Resistance

(junction to lead)

86.3 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH

THE “MICRO-X PACKAGE”