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HMC463 Datasheet(PDF) 4 Page - Hittite Microwave Corporation

Part No. HMC463
Description  GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC463 Datasheet(HTML) 4 Page - Hittite Microwave Corporation

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MICROWAVE CORPORATION
1 - 101
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1
HMC463
v03.0304
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)(AGC)
(Vdd -9.0)
Vdc to +2.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+23 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 50 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (V)
Idd (mA)
+4.5
58
+5.0
60
+5.5
62
Typical Supply Current vs. Vdd
Gain @ Several Control Voltages
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
Vgg2=-1.3 V
Vgg2=-1.2 V
Vgg2=-1.1 V
Vgg2=-1.0 V
Vgg2=-0.9 V
Vgg2=-0.6 V
Vgg2=-0.4 V
Vgg2=0 V
FREQUENCY (GHz)


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