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CSD19532KTTT Datasheet(PDF) 3 Page - Texas Instruments |
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CSD19532KTTT Datasheet(HTML) 3 Page - Texas Instruments |
3 / 12 page CSD19532KTT www.ti.com SLPS553 – OCTOBER 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 100 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.2 2.6 3.2 V VGS = 6 V, ID = 90 A 5.3 6.6 m Ω RDS(on) Drain-to-source on resistance VGS = 10 V, ID = 90 A 4.6 5.6 m Ω gfs Transconductance VDS = 10 V, ID = 90 A 113 S DYNAMIC CHARACTERISTICS Ciss Input capacitance 3890 5060 pF Coss Output capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 674 876 pF Crss Reverse transfer capacitance 14 18 pF RG Series gate resistance 1.3 2.6 Ω Qg Gate charge total (10 V) 44 57 nC Qgd Gate charge gate to drain 5.6 nC VDS = 50 V, ID = 90 A Qgs Gate charge gate to source 17 nC Qg(th) Gate charge at Vth 9.6 nC Qoss Output charge VDS = 50 V, VGS = 0 V 124 nC td(on) Turn on delay time 9 ns tr Rise time 3 ns VDS = 50 V, VGS = 10 V, IDS = 90 A, RG = 0 Ω td(off) Turn off delay time 14 ns tf Fall time 2 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 90 A, VGS = 0 V 0.9 1.0 V Qrr Reverse recovery charge 326 nC VDS= 50 V, IF = 90 A, di/dt = 300 A/ μs trr Reverse recovery time 74 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.6 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD19532KTT |
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