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CSD17313Q2Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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CSD17313Q2Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs 10 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 1 10 100 D011 TC = 25GC TC = 125GC TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1 1.2 1.4 1.6 1.8 D008 VGS = 4.5 V VGS = 8 V VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 D009 TC = 25°C TC = 125°C CSD17313Q2Q1 SLPS427D – OCTOBER 2012 – REVISED SEPTEMBER 2015 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise noted) ID = 4 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single Pulse, Max RθJC = 7.4°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated |
Similar Part No. - CSD17313Q2Q1_15 |
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Similar Description - CSD17313Q2Q1_15 |
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