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TPS24710 Datasheet(PDF) 14 Page - Texas Instruments |
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TPS24710 Datasheet(HTML) 14 Page - Texas Instruments |
14 / 38 page TPS24710, TPS24711 TPS24712, TPS24713 SLVSAL2G – JANUARY 2011 – REVISED NOVEMBER 2015 www.ti.com 8.3 Feature Description 8.3.1 DETAILED PIN DESCRIPTIONS 8.3.1.1 EN Applying a voltage of 1.35 V or more to this pin enables the gate driver. The addition of an external resistor divider allows the EN pin to serve as an undervoltage monitor. Cycling EN low and then back high resets the TPS24710/11/12/13 that has latched off due to a fault condition. This pin should not be left floating. 8.3.1.2 FLT FLT is assigned for TPS24712/13. This active-high open-drain output assumes high-impedance when TPS24712/13 has remained in current limit long enough for the fault timer to expire. The behavior of the FLT pin depends on the version of the IC. The TPS24712 operates in latch mode and the TPS24713 operates in retry mode. In latch mode, a fault timeout disables the external MOSFET and holds FLT in open drain condition. The latched mode of operation is reset by cycling EN or VCC. In retry mode, a fault timeout first disables the external MOSFET, next waits sixteen cycles of TIMER charging and discharging, and finally attempts a restart. This process repeats as long as the fault persists. In retry mode, the FLT pin goes open-drain whenever the external MOSFET is disabled by the fault timer. In a sustained fault, the FLT waveform becomes a train of pulses. The FLT pin does not assert if the external MOSFET is disabled by EN, overtemperature shutdown, or UVLO. This pin can be left floating when not used. 8.3.1.3 FLTb FLTb is assigned for TPS24710/11. This active-low open-drain output pulls low when TPS24710/11/12/13 has remained in current limit long enough for the fault timer to expire. The behavior of the FLTb pin depends on the version of the IC. The TPS24710 operates in latch mode and the TPS24711 operates in retry mode. In latch mode, a fault timeout disables the external MOSFET and holds FLTb low. The latched mode of operation is reset by cycling EN or VCC. In retry mode, a fault timeout first disables the external MOSFET, next waits sixteen cycles of TIMER charging and discharging, and finally attempts a restart. This process repeats as long as the fault persists. In retry mode, the FLTb pin is pulled low whenever the external MOSFET is disabled by the fault timer. In a sustained fault, the FLTb waveform becomes a train of pulses. The FLTb pin does not assert if the external MOSFET is disabled by EN, overtemperature shutdown, or UVLO. This pin can be left floating when not used. 8.3.1.4 GATE This pin provides gate drive to the external MOSFET. A charge pump sources 30 µA to enhance the external MOSFET. A 13.9-V clamp between GATE and VCC limits the gate-to-source voltage, because VVCC is very close to VOUT in normal operation. During start-up, a transconductance amplifier regulates the gate voltage of M1 to provide inrush current limiting. The TIMER pin charges timer capacitor CT during the inrush. Inrush current limiting continues until the V(GATE – VCC) exceeds the Timer Activation Voltage (5.9 V for VVCC = 12 V). Then the TPS24710/11/12/13 enters into circuit-breaker mode. The Timer Activation Voltage is defined as a threshold voltage. When V(GATE-VCC) exceeds this threshold voltage, the inrush operation is finished and the TIMER stops sourcing current and begins sinking current. In the circuit-breaker mode, the current flowing in RSENSE is compared with the current-limit threshold derived from the MOSFET power-limit scheme (see PROG). If the current flowing in RSENSE exceeds the current limit threshold, then MOSFET M1 is turned off. The GATE pin is disabled by the following three conditions: 1. GATE is pulled down by an 11-mA current source when – The fault timer expires during an overload current fault (VSENSE > 25 mV) – VEN is below its falling threshold – VVCC drops below the UVLO threshold 2. GATE is pulled down by a 1 A current source for 13.5 µs when a hard output short circuit occurs and V(VCC – SENSE) is greater than 60 mV, i.e., the fast-trip shutdown threshold. After fast-trip shutdown is complete, an 11-mA sustaining current ensures that the external MOSFET remains off. 3. GATE is discharged by a 20 k Ω resistor to GND if the chip die temperature exceeds the OTSD rising threshold. 14 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TPS24710 TPS24711 TPS24712 TPS24713 |
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