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TPS24710 Datasheet(PDF) 14 Page - Texas Instruments

Part # TPS24710
Description  High-Efficiency Power-Limiting Hot-Swap Controller
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS24710 Datasheet(HTML) 14 Page - Texas Instruments

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TPS24710, TPS24711
TPS24712, TPS24713
SLVSAL2G – JANUARY 2011 – REVISED NOVEMBER 2015
www.ti.com
8.3 Feature Description
8.3.1 DETAILED PIN DESCRIPTIONS
8.3.1.1 EN
Applying a voltage of 1.35 V or more to this pin enables the gate driver. The addition of an external resistor
divider allows the EN pin to serve as an undervoltage monitor. Cycling EN low and then back high resets the
TPS24710/11/12/13 that has latched off due to a fault condition. This pin should not be left floating.
8.3.1.2 FLT
FLT is assigned for TPS24712/13. This active-high open-drain output assumes high-impedance when
TPS24712/13 has remained in current limit long enough for the fault timer to expire. The behavior of the FLT pin
depends on the version of the IC. The TPS24712 operates in latch mode and the TPS24713 operates in retry
mode. In latch mode, a fault timeout disables the external MOSFET and holds FLT in open drain condition. The
latched mode of operation is reset by cycling EN or VCC. In retry mode, a fault timeout first disables the external
MOSFET, next waits sixteen cycles of TIMER charging and discharging, and finally attempts a restart. This
process repeats as long as the fault persists. In retry mode, the FLT pin goes open-drain whenever the external
MOSFET is disabled by the fault timer. In a sustained fault, the FLT waveform becomes a train of pulses. The
FLT pin does not assert if the external MOSFET is disabled by EN, overtemperature shutdown, or UVLO. This
pin can be left floating when not used.
8.3.1.3 FLTb
FLTb is assigned for TPS24710/11. This active-low open-drain output pulls low when TPS24710/11/12/13 has
remained in current limit long enough for the fault timer to expire. The behavior of the FLTb pin depends on the
version of the IC. The TPS24710 operates in latch mode and the TPS24711 operates in retry mode. In latch
mode, a fault timeout disables the external MOSFET and holds FLTb low. The latched mode of operation is reset
by cycling EN or VCC. In retry mode, a fault timeout first disables the external MOSFET, next waits sixteen
cycles of TIMER charging and discharging, and finally attempts a restart. This process repeats as long as the
fault persists. In retry mode, the FLTb pin is pulled low whenever the external MOSFET is disabled by the fault
timer. In a sustained fault, the FLTb waveform becomes a train of pulses. The FLTb pin does not assert if the
external MOSFET is disabled by EN, overtemperature shutdown, or UVLO. This pin can be left floating when not
used.
8.3.1.4 GATE
This pin provides gate drive to the external MOSFET. A charge pump sources 30 µA to enhance the external
MOSFET. A 13.9-V clamp between GATE and VCC limits the gate-to-source voltage, because VVCC is very close
to VOUT in normal operation. During start-up, a transconductance amplifier regulates the gate voltage of M1 to
provide inrush current limiting. The TIMER pin charges timer capacitor CT during the inrush. Inrush current
limiting continues until the V(GATE – VCC) exceeds the Timer Activation Voltage (5.9 V for VVCC = 12 V). Then the
TPS24710/11/12/13 enters into circuit-breaker mode. The Timer Activation Voltage is defined as a threshold
voltage. When V(GATE-VCC) exceeds this threshold voltage, the inrush operation is finished and the TIMER stops
sourcing current and begins sinking current. In the circuit-breaker mode, the current flowing in RSENSE is
compared with the current-limit threshold derived from the MOSFET power-limit scheme (see PROG). If the
current flowing in RSENSE exceeds the current limit threshold, then MOSFET M1 is turned off. The GATE pin is
disabled by the following three conditions:
1. GATE is pulled down by an 11-mA current source when
The fault timer expires during an overload current fault (VSENSE > 25 mV)
VEN is below its falling threshold
VVCC drops below the UVLO threshold
2. GATE is pulled down by a 1 A current source for 13.5 µs when a hard output short circuit occurs and
V(VCC – SENSE) is greater than 60 mV, i.e., the fast-trip shutdown threshold. After fast-trip shutdown is
complete, an 11-mA sustaining current ensures that the external MOSFET remains off.
3. GATE is discharged by a 20 k
Ω resistor to GND if the chip die temperature exceeds the OTSD rising
threshold.
14
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Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: TPS24710 TPS24711 TPS24712 TPS24713


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