0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

30

D007

0

1

2

3

4

5

6

7

0

1

2

3

4

5

6

7

8

D004

D

D

D

D

D

5

G

6

S

7

S

8

S

P0095-01

Product

Folder

Sample &

Buy

Technical

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Tools &

Software

Support &

Community

Reference

Design

CSD17308Q3

SLPS262B – FEBRUARY 2010 – REVISED OCTOBER 2015

CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs

1 Features

Product Summary

1

•

Optimized for 5-V Gate Drive

VALUE

UNIT

•

Drain-to-source voltage

30

V

•

Low Thermal Resistance

Gate charge total (4.5 V)

3.9

nC

Gate charge gate to drain

0.8

nC

•

Avalanche Rated

12.5

m

Ω

•

Pb Free Terminal Plating

Drain-to-source on resistance

9.4

m

Ω

•

RoHS Compliant

8.2

m

Ω

•

Halogen Free

Threshold voltage

1.3

V

•

VSON 3.3 mm × 3.3 mm Plastic Package

Ordering Information(1)

2 Applications

DEVICE

QTY

MEDIA

PACKAGE

SHIP

•

Notebook Point of Load

13-Inch

SON 3.3 mm × 3.3 mm

Tape and

CSD17308Q3

2500

Reel

Plastic Package

Reel

•

Point-of-Load Synchronous Buck in Networking,

(1) For all available packages, see the orderable addendum at

Telecom, and Computing Systems

the end of the data sheet.

3 Description

Absolute Maximum Ratings

This 30-V, 8.2-m

Ω, 3.3 mm × 3.3 mm VSON

VALUE

UNIT

NexFET™ power MOSFET is designed to minimize

Drain-to-source voltage

30

V

losses

in

power

conversion

applications

and

Gate-to-source voltage

+10 / –8

V

optimized for 5-V gate drive applications.

Continuous Drain Current (Package

50

Limited)

Top View

A

44

Continuous drain current(1)

14

(2)

167

A

Power dissipation(1)

2.7

W

28

Operating Junction and Storage

–55 to 150

°C

Temperature Range

Avalanche energy, single pulse

65

mJ

thick FR4 PCB.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.