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TCS10NPU Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TCS10NPU
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TCS10NPU Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TCS10NPU
2014-03-01
3
DC Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
VCC (V)
Min
Typ.
Max
Unit
Hi-Level
VOH
IOH = −1.0 mA
2.3 to 3.6
VCC
x 90%
Output Voltage
Lo- Level
VOL
IOL = 1.0 mA
2.3 to 3.6
VCC
x 10%
V
2.3 to 2.7
5.5
9.5
Average
Current
ICC
Current at pulse driving
(Note 3, Fig. A)
3.0 to 3.6
8.7
13.2
μA
Supply Current
Operating
Current
ICCON
Peak current
(Note 3, Fig. A)
2.3 to 3.6
0.7
1.3
mA
Operating Frequency
fopr
(Fig. A)
2.3 to 3.6
25
Hz
Note 3: Supply Current is pulsed periodically by internal circuit.
Magnetic Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
(Note 4, Fig. B)
VCC (V)
Min
Typ.
Max
Unit
Operating Point
BON
VOUT = VOL
2.3 to 3.6
-2.5
-1.8
Releasing Point
BOFF
VOUT = VOH
2.3 to 3.6
-0.8
-0.3
Magnetic
Flux
Density
Hysteresis
BH
|BON - BOFF|
2.3 to 3.6
1.0
mT
Note 4: Uniform magnetic field perpendicularly to the magnetic sensor.
(Fig. A) : ICC Characteristics
(Fig. B) : Operating Characteristics
1/fopr (fopr=25 Hz)
Operating Current
(Typ. 0.7 mA)
Average Current
(
Typ. 5.5 μA)
ICC
Time (t)
Magnetic Field, B
VOH
VOL
BH
BOFF
BON
0
VO
Magnetic Flux Density (mT)
North-Pole
Note: Direction of the magnetic field
South- Pole


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