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SSM6J414TU Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # SSM6J414TU
Description  MOSFETs Silicon P-Channel MOS (U-MOSVI)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6J414TU Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM6J414TU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (Taaaa = 25
= 25
= 25
= 25
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = -10 V, VGS = -4.5 V,
ID = -6.0 A
Min
Typ.
23.1
3.8
4.1
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (Taaaa = 25
= 25
= 25
= 25
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
(Note 1)
Symbol
VDSF
Test Condition
ID = 6.0 A, VGS = 0 V
Min
Typ.
0.74
Max
1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2014-04-04
Rev.4.0


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