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SSM6J412TU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6J412TU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page SSM6J412TU 2014-03-01 3 0 -2 -4 -6 Gate–source voltage VGS (V) 0 RDS (ON) – VGS -8 60 − 25 °C 25 °C 140 Ta = 100 °C 120 80 40 20 ID =-0.5A Common Source Pulse test 100 Gate–source voltage VGS (V) ID – VGS -100 -0.0001 0 -1 -10 -0.01 -0.1 -0.001 -2.0 −25 °C Common Source VDS = -3 V Pulse test Ta = 100 °C 25 °C -0.5 -1.5 -1.0 Ambient temperature Ta (°C) RDS (ON) – Ta 120 0 −50 ID = -0.5 A / VGS = -1.5 V 0 50 150 20 40 60 80 100 -2.5 A / -2.5 V -3.0 A / -4.5 V -1.5 A / -1.8 V 140 Drain–source voltage VDS (V) ID – VDS 0 -10 0 -0.2 -0.6 -0.8 -1 -6 -2 -4 Common Source Ta = 25 °C Pulse test -1.8 V -2.5 V -0.4 VGS =-4.5 V -8 RDS (ON) – VGS Gate–source voltage VGS (V) RDS (ON) – ID -1.5 V 0 -2 -4 -6 0 -8 60 − 25 °C 25 °C 140 Ta = 100 °C 120 80 40 20 ID =-2.5A Common Source Pulse test 100 -8.0 Drain current ID (A) 0 -2.0 -4.0 0 -6.0 140 VGS = -1.5 V -2.5 V -1.8 V 120 100 80 40 20 60 -4.5 V -10.0 Common Source Pulse test 100 Common Source Ta = 25°C Pulse test |
Similar Part No. - SSM6J412TU_14 |
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Similar Description - SSM6J412TU_14 |
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