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DMTH8012LPSQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMTH8012LPSQ-13
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH8012LPSQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMTH8012LPSQ
Document number: DS38376 Rev.1 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated
DMTH8012LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V (Note 6)
TA = +25C
TA = +70C
ID
10
8.4
A
Continuous Drain Current, VGS = 10V (Note 7)
TC = +25C
TC = +70C
ID
72
60
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
90
A
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
IDM
80
A
Avalanche Current, L=0.1mH
IAS
11.6
A
Avalanche Energy, L=0.1mH
EAS
10.2
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.6
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
57
°C/W
Total Power Dissipation (Note 7)
TC = +25°C
PD
136
W
Thermal Resistance, Junction to Case (Note 7)
RJC
1.1
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
80
-
-
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 64V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1
-
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
-
12.3
17
m
VGS = 10V, ID = 12A
-
15.1
21
VGS = 4.5V, ID = 6A
Diode Forward Voltage
VSD
-
0.9
1.2
V
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
-
2051
-
pF
VDS = 40V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
-
189.9
-
Reverse Transfer Capacitance
Crss
-
24.6
-
Gate Resistance
Rg
-
0.44
-
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
-
24.1
-
nC
VDS = 40V, ID = 12A
Total Gate Charge (VGS = 10V)
Qg
-
46.8
-
Gate-Source Charge
Qgs
-
6.9
-
Gate-Drain Charge
Qgd
-
12.2
-
Turn-On Delay Time
tD(ON)
-
5.8
-
ns
VDD = 40V, VGS = 10V,
ID = 12A, RG = 1.6Ω
Turn-On Rise Time
tR
-
6.5
-
Turn-Off Delay Time
tD(OFF)
-
17.3
-
Turn-Off Fall Time
tF
-
4.7
-
Body Diode Reverse Recovery Time
tRR
-
33.5
-
ns
IF = 12A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
-
38.9
-
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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