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DMTH8012LPSQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMTH8012LPSQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page POWERDI is a registered trademark of Diodes Incorporated. DMTH8012LPSQ Document number: DS38376 Rev.1 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated DMTH8012LPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 6) TA = +25C TA = +70C ID 10 8.4 A Continuous Drain Current, VGS = 10V (Note 7) TC = +25C TC = +70C ID 72 60 A Maximum Continuous Body Diode Forward Current (Note 7) IS 90 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 80 A Avalanche Current, L=0.1mH IAS 11.6 A Avalanche Energy, L=0.1mH EAS 10.2 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) TA = +25°C PD 2.6 W Thermal Resistance, Junction to Ambient (Note 6) RJA 57 °C/W Total Power Dissipation (Note 7) TC = +25°C PD 136 W Thermal Resistance, Junction to Case (Note 7) RJC 1.1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 80 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 64V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1 - 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 12.3 17 m Ω VGS = 10V, ID = 12A - 15.1 21 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD - 0.9 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 2051 - pF VDS = 40V, VGS = 0V, f = 1MHz Output Capacitance Coss - 189.9 - Reverse Transfer Capacitance Crss - 24.6 - Gate Resistance Rg - 0.44 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg - 24.1 - nC VDS = 40V, ID = 12A Total Gate Charge (VGS = 10V) Qg - 46.8 - Gate-Source Charge Qgs - 6.9 - Gate-Drain Charge Qgd - 12.2 - Turn-On Delay Time tD(ON) - 5.8 - ns VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω Turn-On Rise Time tR - 6.5 - Turn-Off Delay Time tD(OFF) - 17.3 - Turn-Off Fall Time tF - 4.7 - Body Diode Reverse Recovery Time tRR - 33.5 - ns IF = 12A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR - 38.9 - nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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