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HMC356LP3 Datasheet(PDF) 4 Page - Hittite Microwave Corporation

Part No. HMC356LP3
Description  GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC356LP3 Datasheet(HTML) 4 Page - Hittite Microwave Corporation

   
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MICROWAVE CORPORATION
8 - 121
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8
HMC356LP3
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
103
+5.0
104
+5.5
105
Drain Bias Voltage (Vdd)
+8.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+15 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
0.910 W
Thermal Resistance
(channel to ground paddle)
71.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.


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