SSM6K504NU

1

MOSFETs Silicon N-Channel MOS (U-MOS-H)

SSM6K504NU

SSM6K504NU

SSM6K504NU

SSM6K504NU

Start of commercial production

2012-07

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

High-Speed Switching

2.

2.

2.

2. Features

Features

Features

Features

(1)

4.5 V gate drive voltage.

(2)

Low drain-source on-resistance

3.

3.

3.

3. Packaging and Pin Assignment

Packaging and Pin Assignment

Packaging and Pin Assignment

Packaging and Pin Assignment

UDFN6B

1.2.5.6 Drain

3. Gate

4. Source

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25





))))

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Power dissipation

Channel temperature

Storage temperature

t ≤ 10 s

(Note 1)

(Note 1,2)

(Note 3)

(Note 3)

Symbol

Rating

30

±20

9

18

1.25

2.5

150

-55 to 150

Unit

V

A

W

W



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%

Note 3: Device mounted on a FR4 board.

2014-04-04

Rev.2.0