SSM6K211FE_14 datasheet(3/6 Pages) TOSHIBA

Part #	SSM6K211FE

Description	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM6K211FE

2014-03-01

3

Gate-source voltage VGS (V)

ID – VGS

10

0

0.1

1

0.001

0.01

0.0001

2.0

1.0

Drain current ID (A)

RDS (ON) – ID

0

2

6

4

0

100

200

Ambient temperature Ta (°C)

Vth – Ta

0.8

0

−50

0

150

0.2

0.4

0.6

1.0

50

100

Ambient temperature Ta (°C)

RDS (ON) – Ta

0

−50

0

50

150

120

100

60

0

2

6

Gate-source voltage VGS (V)

0

100

200

RDS (ON) – VGS

Drain-source voltage VDS (V)

ID – VDS

0

5

0

0.4

0.6

1.0

1

2

0.8

7

0.2

3

4

6

4

8

Common Source

VDS = 3 V

Ta

= 100 °C

− 25 °C

25 °C

1.5 V

2.5 V

1.8 V

4.5 V

Common Source

Ta

= 25 °C

VGS = 1.2 V

25 °C

VGS = 4.5 V

2.5 V

1.8 V

Common Source

Ta

= 25°C

1.5V

1.0 A / 1.8 V

ID = 2.0 A / VGS = 4.5 V

Common Source

VDS = 3 V

ID = 1 mA

ID =2.0A

Common Source

Ta

= 100 °C

− 25 °C

10 V

0.5 A / 1.5 V

2.0 A / 2.5 V

20

40

80

100

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SSM6K211FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

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