Electronic Components Datasheet Search |
|
SSM6K211FE Datasheet(PDF) 2 Page - Toshiba Semiconductor |
|
SSM6K211FE Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page SSM6K211FE 2014-03-01 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 1 mA, VGS = –10 V 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 2.0 A (Note 2) 5.5 11.0 ⎯ S ID = 2.0 A, VGS = 4.5 V (Note 2) ⎯ 36 47 ID = 2.0 A, VGS = 2.5 V (Note 2) ⎯ 44 59 ID = 1.0 A, VGS = 1.8 V (Note 2) ⎯ 55 82 Drain-source ON-resistance RDS (ON) ID = 0.5 A, VGS = 1.5 V (Note 2) ⎯ 66 118 m Ω Input capacitance Ciss ⎯ 510 ⎯ Output capacitance Coss ⎯ 98 ⎯ Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 85 ⎯ pF Total Gate Charge Qg ⎯ 10.8 ⎯ Gate-Source Charge Qgs ⎯ 8.6 ⎯ Gate-Drain Charge Qgd VDS = 10 V, ID = 3.2 A, VGS = 4.5 V ⎯ 2.2 ⎯ nC Turn-on time ton ⎯ 16 ⎯ Switching time Turn-off time toff VDD = 10 V, ID = 1.0 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 40 ⎯ ns Drain-source forward voltage VDSF ID = –3.2 A, VGS = 0 V (Note 2) ⎯ –0.84 –1.2 V Note 2: Pulse test Switching Time Test Circuit Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6K211FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2.5 V ton toff (b) VIN (c) VOUT 0 V VDD VDS (ON) tr tf 10% 90% 90% 10% (a) Test Circuit VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 0 2.5 V IN OUT VDD 10 μs |
Similar Part No. - SSM6K211FE_14 |
|
Similar Description - SSM6K211FE_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |