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SSM6K211FE Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # SSM6K211FE
Description  TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS3)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6K211FE Datasheet(HTML) 2 Page - Toshiba Semiconductor

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SSM6K211FE
2014-03-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS ID = 1 mA, VGS = 0 V
20
Drain-source breakdown voltage
V (BR) DSX ID = 1 mA, VGS = –10 V
12
V
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0 V
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
±1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
1.0
V
Forward transfer admittance
⏐Yfs
VDS = 3 V, ID = 2.0 A
(Note 2)
5.5
11.0
S
ID = 2.0 A, VGS = 4.5 V
(Note 2)
36
47
ID = 2.0 A, VGS = 2.5 V
(Note 2)
44
59
ID = 1.0 A, VGS = 1.8 V
(Note 2)
55
82
Drain-source ON-resistance
RDS (ON)
ID = 0.5 A, VGS = 1.5 V
(Note 2)
66
118
m
Ω
Input capacitance
Ciss
510
Output capacitance
Coss
98
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
85
pF
Total Gate Charge
Qg
10.8
Gate-Source Charge
Qgs
8.6
Gate-Drain Charge
Qgd
VDS = 10 V, ID = 3.2 A, VGS = 4.5 V
2.2
nC
Turn-on time
ton
16
Switching time
Turn-off time
toff
VDD = 10 V, ID = 1.0 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
40
ns
Drain-source forward voltage
VDSF
ID = –3.2 A, VGS = 0 V
(Note 2)
–0.84
–1.2
V
Note 2: Pulse test
Switching Time Test Circuit
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM6K211FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2.5 V
ton
toff
(b) VIN
(c) VOUT
0 V
VDD
VDS (ON)
tr
tf
10%
90%
90%
10%
(a) Test Circuit
VDD = 10 V
RG = 4.7 Ω
Duty
≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta
= 25°C
0
2.5 V
IN
OUT
VDD
10
μs


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