SSM3K116TU

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K116TU

High Speed Switching Applications

• 2.5V drive

• Low on-resistance:

Characteristic

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

± 12

V

DC

2.2

Drain current

Pulse

4.4

A

800

Drain power dissipation

500

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Mounted on ceramic board.

(25.4 mm

Note 2: Mounted on FR4 board.

(25.4 mm

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

30

⎯

⎯

Drain-Source breakdown voltage

18

⎯

⎯

V

Drain cut-off current

⎯

⎯

1

μA

Gate leakage current

⎯

⎯

±1

μA

Gate threshold voltage

0.5

⎯

1.1

V

Forward transfer admittance

(Note3)

1

2

⎯

S

(Note3)

⎯

75

100

Drain-Source on-resistance

(Note3)

⎯

95

135

m

Ω

Input capacitance

⎯

245

⎯

pF

Output capacitance

⎯

41

⎯

pF

Reverse transfer capacitance

⎯

33

⎯

pF

Turn-on time

⎯

9

⎯

Switching time

Turn-off time

⎯

15

⎯

ns

Drain-Source forward voltage

(Note3)

⎯

−0.83

-1.2

V

Note3: Pulse test

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

1: Gate

2: Source

3: Drain

1.7±0.1

2.1±0.1

1

2

3

UFM

Start of commercial production

2005-06