SSM3K106TU_14 datasheet(2/6 Pages) TOSHIBA

Part #	SSM3K106TU

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

SSM3K106TU

2014-03-01

2

Switching Time Test Circuit

(a) Test Circuit

(b) VIN

Marking

Equivalent Circuit (top view)

Note

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 0.1 mA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower

voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

(c) VOUT

VDD = 10 V

RG = 10 Ω

Duty ≤ %

VIN: tr, tf < 5 ns

Common Source

Ta

= 25°C

VDD

OUT

IN

4 V

0

10

μs

tf

ton

90%

10%

4 V

0 V

10%

90%

toff

tr

VDD

VDS (ON)

KK6

1

2

3

1

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SSM3K106TU Datasheet(PDF) 2 Page - Toshiba Semiconductor

SSM3K106TU Datasheet(HTML) 2 Page - Toshiba Semiconductor

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