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SSM5H11TU Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # SSM5H11TU
Description  Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM5H11TU Datasheet(HTML) 3 Page - Toshiba Semiconductor

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SSM5H11TU
2014-03-01
3
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM (1)
IF = 0.5 A
0.34
0.41
V
Peak forward voltage
VFM (2)
IF = 0.7 A
0.37
0.44
V
Repetitive peak reverse current
IRRM
VR = 15 V
60
200
μA
Junction capacitance
CT
VR = 0 V, f = 1 MHz
139
pF
Precaution
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board
material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into
account.


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