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TRS24N65D Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TRS24N65D
Description  SiC Schottky Barrier Diode
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TRS24N65D Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TRS24N65D
2
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Thermal resistance (junction-to-case)
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-c)
Rth(j-a)
Test Condition
Per Leg
Both Legs
Max
1.68
0.84
50
Unit
/W
6.
6.
6.
6. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Symbol
VFM(1)
VFM(2)
VFM(3)
IRRM
Cj
Test Condition
IF = 6 A Per Leg (pulse measurement)
IF = 12 A Per Leg (pulse measurement)
IF = 24 A Both Legs (pulse measurement)
VRRM = 650 V Per Leg (pulse measurement)
VR = 650 V, f = 1 MHz Per Leg
Min
Typ.
1.27
1.54
1.54
0.43
65
Max
1.7
1.7
90
Unit
V
µA
pF
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Abbreviation Code
S24N65D
Part Number
TRS24N65D
8.
8.
8.
8. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
(1)
The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant. The following are the recommended general derating methods for designing a circuit board using
this device.
VRRM: VRRM has a temperature coefficient of 0.1 %/.
Take this coefficient into account when designing a circuit board that will be operated
in a low-temperature environment.
IF(DC): We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of IF(DC) and that the worst-case junction temperature, Tj, be kept below 140 .
IFP:
We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of IFP and that the worst-case junction temperature, Tj, be kept below 140 .
I2t:
This rating specifies a non-repetitive limit value.
This only applies to an abnormal operation, which seldom occurs during the lifespan of a device.
Tj:
Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (Tj) of a device be kept below 140 .
(2)
For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website.
2014-04-25
Rev.3.0


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