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HMC216MS8 Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part No. HMC216MS8
Description  GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC216MS8 Datasheet(HTML) 1 Page - Hittite Microwave Corporation

   
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MICROWAVE CORPORATION
12 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
12
HMC216MS8
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
v01.0801
General Description
Features
Functional Diagram
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
Electrical Specifications, T
A = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc
Typical Applications
The HMC216MS8 is ideal for:
• Base Stations
• WirelessLAN
• PCMCIA
• Portable Wireless
The HMC216MS8 is an ultra miniature double-
balanced FET mixer in an 8 lead plastic surface
mount package (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel
planar transformer baluns on the chip. In addition
to an LO drive of +3 to +13 dBm, a gate voltage of
Vgg = -0.9 to -1.6 Vdc is required. The device can
be used as an upconverter or downconverter for
1900 or 2400 MHz applications. The consistent
MMIC performance will improve system opera-
tion and assure regulatory compliance.
Parameter
LO = +11 dBm
LO = +7 dBm
LO = +3 dBm
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
1.3 - 2.5
1.6 - 2.3
1.7 - 2.0
GHz
Frequency Range, IF
DC - 0.65
DC - 0.5
DC - 0.4
GHz
Conversion Loss
9
10.5
8.5
10
9
10.5
dB
Noise Figure (SSB)
9
10.5
8.5
10
9
10.5
dB
LO to RF Isolation
27
30
27
32
27
32
dB
LO to IF Isolation
17
20
17
20
17
20
dB
IP3 (Input)
21
25
14
18
8
12
dBm
1 dB Gain Compression (Input)
8
11
5
10
3
8
dBm


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