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HMC216MS8 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC216MS8 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page MICROWAVE CORPORATION 12 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v01.0801 General Description Features Functional Diagram IP3 (Input): +25 dBm @ +11 dBm LO LO Range = +3 to +11 dBm Conversion Loss: 8.5 dB LO / RF Isolation: 32 dB Electrical Specifications, T A = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc Typical Applications The HMC216MS8 is ideal for: • Base Stations • WirelessLAN • PCMCIA • Portable Wireless The HMC216MS8 is an ultra miniature double- balanced FET mixer in an 8 lead plastic surface mount package (MSOP). This MMIC mixer is constructed of switched GaAs FETs and novel planar transformer baluns on the chip. In addition to an LO drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9 to -1.6 Vdc is required. The device can be used as an upconverter or downconverter for 1900 or 2400 MHz applications. The consistent MMIC performance will improve system opera- tion and assure regulatory compliance. Parameter LO = +11 dBm LO = +7 dBm LO = +3 dBm Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range, RF & LO 1.3 - 2.5 1.6 - 2.3 1.7 - 2.0 GHz Frequency Range, IF DC - 0.65 DC - 0.5 DC - 0.4 GHz Conversion Loss 9 10.5 8.5 10 9 10.5 dB Noise Figure (SSB) 9 10.5 8.5 10 9 10.5 dB LO to RF Isolation 27 30 27 32 27 32 dB LO to IF Isolation 17 20 17 20 17 20 dB IP3 (Input) 21 25 14 18 8 12 dBm 1 dB Gain Compression (Input) 8 11 5 10 3 8 dBm |
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