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DMTH4005SK3Q-13 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMTH4005SK3Q-13
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH4005SK3Q-13 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMTH4005SK3Q
Document number: DS38661 Rev. 1 - 2
3 of 7
www.diodes.com
March 2016
© Diodes Incorporated
DMTH4005SK3Q
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 3.5V
V
GS = 4.0V
V
GS = 10.0V
V
GS=4.5V
V
GS = 5.0V
0.00
1.00
2.00
3.00
4.00
5.00
6.00
0
5
10
15
20
25
30
35
40
45
50
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 10.0V
0
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 50A
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
10
20
30
40
50
60
70
80
90
100
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
-55
℃
25
℃
85
℃
150
℃
125
℃
V
GS = 10V
175
℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 10V, ID = 50A
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5.0V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃


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