DMT6004SCT

Document number: DS38565 Rev. 1 - 2

2 of 6

www.diodes.com

April 2016

© Diodes Incorporated

DMT6004SCT

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 6)

(Note 9)

100

A

100

Maximum Continuous Body Diode Forward Current (Note 6)

100

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

180

A

Avalanche Current, L=0.2mH

45

A

Avalanche Energy, L=0.2mH

200

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

W

Thermal Resistance, Junction to Ambient (Note 5)

°C/W

Total Power Dissipation (Note 6)

W

Thermal Resistance, Junction to Case (Note 6)

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

3.1

3.65

m



Diode Forward Voltage

—

—

1.3

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

4556

—

pF

f = 1MHz

Output Capacitance

—

1383

—

Reverse Transfer Capacitance

—

105

—

Gate Resistance

—

0.7

—



Total Gate Charge

—

95.4

—

nC



Gate-Source Charge

—

21.6

—

Gate-Drain Charge

—

20.4

—

Turn-On Delay Time

—

14.3

—

ns

Turn-On Rise Time

—

99.1

—

Turn-Off Delay Time

—

40

—

Turn-Off Fall Time

—

17.6

—

Reverse Recovery Time

—

50.5

—

ns

Reverse Recovery Charge

—

80.8

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on infinite heat sink.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Package limited.