Electronic Components Datasheet Search |
|
TLP176G Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
TLP176G Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TLP176G 2014-09-22 1 TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET TLP176G Modems In PC Modem−Fax Cards Telecommunications The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require space savings. • Peak off−state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On−state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL recognized: UL1577, file No. E67349 • BSI approved : BS EN60065: 2002, certificate No.8753 BS EN60950-1: 2002, certificate No.8754 • SEMKO approved: SS EN60065 SS EN60950 • Option(V4) type TUV approved: DIN EN 60747-5-2 Certificate No.40009351 Pin Configuration (top view) Schematic 1-Form-A 1. : Anode 2. : Cathode 3. : Drain 4. : Drain 2 3 4 1 1 2 3 4 1 2 3 4 Unit in mm JEDEC ― JEITA ― TOSHIBA Weight: 0.1 g (typ.) Start of commercial production 1997/10 |
Similar Part No. - TLP176G_14 |
|
Similar Description - TLP176G_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |