DMN601WKQ

Document number: DS38408 Rev. 1 - 2

4 of 7

www.diodes.com

January 2016

© Diodes Incorporated

DMN601WKQ

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

V

= 5V

GS

I = 50mA

D

V

= 10V

GS

I = 500mA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

1

1.2

1.4

1.6

1.8

2

2.2

-50

-25

0

25

50

75

100

125

150

I

= 1mA

D

I = 250µA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

0

0.2

0.4

0.6

0.8

1

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

1

10

100

0

5

10

15

20

25

30

35

40

f=1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0.001

0.01

0.1

1

10

0.1

1

10

100

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

Limited

T

= 150°C

J (m ax )

T = 25°C

A

V

= 10V

GS

Single Pulse

DUT on 1 * MRP Board

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 SOA, Safe Operation Area